Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

Elhadj, Selim; Yoo, Jae-hyuck; Negres, Raluca A.; Menor, Marlon G.; Adams, John J.; Shen, Nan; Cross, David A.; Bass, Isaac L.; Bude, Jeff D.

doi:10.1364/OME.7.000202

Title: Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

Journal Article · Mon Dec 19 00:00:00 EST 2016 · Optical Materials Express

DOI:https://doi.org/10.1364/OME.7.000202· OSTI ID:1367998

Elhadj, Selim ^[1]; Yoo, Jae-hyuck ^[1]; Negres, Raluca A. ^[1]; Menor, Marlon G. ^[1]; Adams, John J. ^[1]; Shen, Nan ^[1]; Cross, David A. ^[1]; Bass, Isaac L. ^[1]; Bude, Jeff D. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Physical and Life Sciences and NIF and Photon Sciences

The optical damage performance of electrically conductive gallium nitride (GaN) and indium tin oxide (ITO) films is addressed using large area, high power laser beam exposures at 1064 nm sub-bandgap wavelength. Analysis of the laser damage process assumes that onset of damage (threshold) is determined by the absorption and heating of a nanoscale region of a characteristic size reaching a critical temperature. We use this model to rationalize semi-quantitatively the pulse width scaling of the damage threshold from picosecond to nanosecond timescales, along with the pulse width dependence of the damage threshold probability derived by fitting large beam damage density data. Multi-shot exposures were used to address lifetime performance degradation described by an empirical expression based on the single exposure damage model. A damage threshold degradation of at least 50% was observed for both materials. Overall, the GaN films tested had 5-10 × higher optical damage thresholds than the ITO films tested for comparable transmission and electrical conductivity. This route to optically robust, large aperture transparent electrodes and power optoelectronics may thus involve use of next generation widegap semiconductors such as GaN.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344; 15-ERD-057

OSTI ID:: 1367998

Report Number(s):: LLNL-JRNL-706843

Journal Information:: Optical Materials Express, Vol. 7, Issue 1; ISSN 2159-3930

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications Yoo, Jae-Hyuck; Lange, Andrew; Chesser, John physica status solidi (a), Vol. 216, Issue 22 https://doi.org/10.1002/pssa.201970073	journal	September 2019
Lifetime laser damage performance of β-Ga ₂ O ₃ for high power applications Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew APL Materials, Vol. 6, Issue 3 https://doi.org/10.1063/1.5021603	journal	March 2018
Thermally ruggedized ITO transparent electrode films for high power optoelectronics Yoo, Jae-Hyuck; Matthews, Manyalibo; Ramsey, Phil Optics Express, Vol. 25, Issue 21 https://doi.org/10.1364/oe.25.025533	journal	January 2017
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