Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN pin Diodes
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Quora Technology Inc., Santa Clara, CA (United States)
- Dept. of Energy (DOE), Washington DC (United States). Advanced Research Projects Agency-Energy (ARPA-E)
Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality. We experimentally examine the effects of proton irradiation on multiple field ring edge terminations in high power vertical GaN pin diodes using in operando imaging with electron beam induced current (EBIC). We find that exposure to proton irradiation influences field spreading in the edge termination as well as carrier transport near the anode. By using depth-dependent EBIC measurements of hole diffusion length in homoepitaxial n-GaN we demonstrate that the carrier transport effect is due to a reduction in hole diffusion length following proton irradiation.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1367089
- Report Number(s):
- SAND--2017-6490J; 654636
- Journal Information:
- IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 7 Vol. 38; ISSN 0741-3106
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes
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journal | July 2019 |