Anisotropic strain induced directional metallicity in highly epitaxial LaBaCo2O5.5+δ thin films on (110) NdGaO3
- Xi'an Jiaotong Univ., Shaanxi (People's Republic of China); Univ. of Texas, San Antonio, TX (United States)
- Chinese Academy of Sciences, Changchun (People's Republic of China); Rensselaer Polytechnic Inst., Troy, NY (United States)
- Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
- Univ. of Texas, San Antonio, TX (United States)
- Univ. of Electronic Science and Technology of China, Sichuan (People's Republic of China)
- Univ. of Texas, Arlington, TX (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Lastly, our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.
- Research Organization:
- Univ. of Texas at San Antonio, TX (United States); Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- FE0003780; SC0002623
- OSTI ID:
- 1361203
- Journal Information:
- Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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