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Title: Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS2 on Graphene for Enhanced Photoresponse

Journal Article · · Advanced Electronic Materials
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [4]; ORCiD logo [5]
  1. Zhengzhou Univ. (China). College of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS) and Computational Sciences and Engineering Division
  3. Shaanxi Normal Univ., Xi'an City (China). Key Lab. for Macromolecular Science of Shaanxi Province School of Chemistry and Chemical Engineering
  4. Griffith Univ., QLD (Australia). Griffith School of Environment, Centre for Clean Environment and Energy; Chinese Academy of Sciences (CAS), Hefei (China). Inst. of Solid State Physics, Centre for Environmental and Energy Nanomaterials
  5. Griffith Univ., QLD (Australia). Griffith School of Environment, Centre for Clean Environment and Energy

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T'-MoS2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC); Australian Research Council (ARC); National Natural Science Foundation of China (NSFC)
Grant/Contract Number:
AC05-00OR22725; 51173170; 21101141
OSTI ID:
1356943
Journal Information:
Advanced Electronic Materials, Vol. 3; ISSN 2199-160X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 27 works
Citation information provided by
Web of Science

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Cited By (6)

Supercritical Fluid‐Facilitated Exfoliation and Processing of 2D Materials journal July 2019
2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage journal November 2018
Building a lateral/vertical 1T-2H MoS 2 /Au heterostructure for enhanced photoelectrocatalysis and surface enhanced Raman scattering journal January 2019
Recent Development of Metallic (1T) Phase of Molybdenum Disulfide for Energy Conversion and Storage journal March 2018
Structural‐Phase Catalytic Redox Reactions in Energy and Environmental Applications journal January 2020
Effect of Structural Phases on Mechanical Properties of Molybdenum Disulfide journal March 2020