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Analysis of Multilayer Devices for Superconducting Electronics by High-Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy

Journal Article · · IEEE Transactions on Applied Superconductivity
 [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3];  [3];  [4];  [4];  [4];  [4]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. New York Univ., NY (United States)
  3. HYPRES Inc., Elmsford, NY (United States)
  4. Massachusetts Inst. of Technology (MIT), Lexington, MA (United States). Lincoln Lab.

We used a focused ion beam to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). An automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; Intelligence Advanced Research Projects Activity (IARPA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1356860
Alternate ID(s):
OSTI ID: 1380082
Report Number(s):
SAND2017--4569J; 652917
Journal Information:
IEEE Transactions on Applied Superconductivity, Journal Name: IEEE Transactions on Applied Superconductivity Journal Issue: 4 Vol. 27; ISSN 1051-8223
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
Country of Publication:
United States
Language:
English