Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

Auden, E. C.; Vizkelethy, G.; Serkland, D. K.; Bossert, D. J.; Doyle, B. L.

doi:10.1016/j.nimb.2017.03.045

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

Journal Article · Fri Mar 24 00:00:00 EDT 2017 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2017.03.045· OSTI ID:1356832

Auden, E. C. ^[1]; Vizkelethy, G. ^[1]; Serkland, D. K. ^[1]; Bossert, D. J. ^[1]; Doyle, B. L. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, the Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0.3Ga_0.7As/GaAs/Al_0.25Ga_0.75As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1356832

Alternate ID(s):: OSTI ID: 1413778
OSTI ID: 22624116

Report Number(s):: SAND--2017-2945J; PII: S0168583X17302835

Journal Information:: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Journal Issue: C Vol. 399; ISSN 0168-583X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (13)

A general expression for electrostatic induction and its application to semiconductor devices Gunn, J. B. Solid-State Electronics, Vol. 7, Issue 10 https://doi.org/10.1016/0038-1101(64)90031-0	journal	October 1964
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment Vittone, E.; Pastuovic, Z.; Breese, M. B. H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 372 https://doi.org/10.1016/j.nimb.2016.01.030	journal	April 2016
Concentration dependence of the absorption coefficient for n − and p −type GaAs between 1.3 and 1.6 eV Casey, H. C.; Sell, D. D.; Wecht, K. W. Journal of Applied Physics, Vol. 46, Issue 1 https://doi.org/10.1063/1.321330	journal	January 1975
Semiconducting and other major properties of gallium arsenide Blakemore, J. S. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.331665	journal	October 1982
Effects of radiation damage in silicon p - i - n photodiodes McPherson, M.; Jones, B. K.; Sloan, T. Semiconductor Science and Technology, Vol. 12, Issue 10 https://doi.org/10.1088/0268-1242/12/10/003	journal	October 1997
Neutron damage equivalence in GaAs Griffin, P. J.; Kelly, J. G.; Luera, T. F. IEEE Transactions on Nuclear Science, Vol. 38, Issue 6 https://doi.org/10.1109/23.124096	journal	December 1991
The Effects of Neutron Irradiation on Germanium and Silicon Messenger, G.; Spratt, J. Proceedings of the IRE, Vol. 46, Issue 6 https://doi.org/10.1109/JRPROC.1958.286841	journal	June 1958
Saturation velocity of electrons in GaAs Houston, P. A.; Evans, A. G. R. IEEE Transactions on Electron Devices, Vol. 23, Issue 6 https://doi.org/10.1109/T-ED.1976.18456	journal	June 1976
The concept of generation and recombination lifetimes in semiconductors Schroder, D. K. IEEE Transactions on Electron Devices, Vol. 29, Issue 8 https://doi.org/10.1109/T-ED.1982.20879	journal	August 1982
Review of displacement damage effects in silicon devices Srour, J. R.; Marshall, C. J.; Marshall, P. W. IEEE Transactions on Nuclear Science, Vol. 50, Issue 3 https://doi.org/10.1109/TNS.2003.813197	journal	June 2003
Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors Bielejec, E.; Vizkelethy, G.; Kolb, N. R. IEEE Transactions on Nuclear Science, Vol. 53, Issue 6 https://doi.org/10.1109/TNS.2006.886231	journal	January 2006
Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence. Blansett, Ethan; Geib, Kent; Cich, Michael https://doi.org/10.2172/934851	report	January 2008

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Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

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