Bismuth incorporation into gallium phosphide

Journal Article · Wed Dec 21 04:00:00 EST 2016 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.2245432· OSTI ID:1352735

Jena, Puru ^[1]; Kandalam, Anil K. ^[2]; Christian, Theresa M. ^[3]; Beaton, Daniel A. ^[3]; Mascarenhas, Angelo ^[3]; Alberi, Kirstin ^[3]

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1. Virginia Commonwealth Univ. (United States)
2. West Chester Univ. of Pennsylvania (United States)
3. National Renewable Energy Lab. (United States)

Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 degrees C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1352735
• Report Number(s): NREL/CP--5K00-68380
• Journal Information: Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 10174; ISSN 0277-786X
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GaP
dilute bismide
interstitials
molecular beam epitaxy