Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Ben Saddik, K.; Braña, A. F.; López, N.; Walukiewicz, W.; García, B. J.

doi:10.1063/1.5111090

Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Journal Article · Tue Sep 10 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5111090· OSTI ID:1560906

Ben Saddik, K.; ; ; ;

Chemical beam epitaxy has been used to grow layers of GaP1 − xNx, GaP1 − yAsy, and nearly lattice-matched layers GaP1 − x − yAsyNx on Si substrates. To address the issue of antiphase domain generation associated with the growth of polar semiconductors on Si, misoriented Si(001) substrates have been used combined with a carefully designed GaP buffer layer growth. The reflection high-energy electron diffraction pattern exhibits a (2 × 4) surface reconstruction after GaP buffer layer and GaP(As,N) graded layer growth, indicating the good surface quality and planarity of the grown layers. Sample composition was obtained by simultaneous acquisition of Rutherford backscattering spectrometry and nuclear reaction analysis, indicating a linear dependence of N and As mole fractions on the flux of their respective precursor. GaP1 − x − yAsyNx layers grown on Si substrates have a lattice mismatch not larger than ±0.005 for N contents in the range 0.02 < x < 0.05. High-resolution X-ray diffraction reciprocal space maps demonstrate a good crystalline quality. Intense photoluminescence spectra have been measured in all GaP1 − xNx and GaP1 − x − yAsyNx layers, as it is expected for direct bandgap materials. Two wide overlapped emission peaks are observed in all the spectra, most likely related to near bandgap recombination. The position of the higher energy peak for GaP1 − xNx and GaP1 − x − yAsyNx layers has been compared to bandgap energy calculations using the band anticrossing model, showing good agreement.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1560906

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 126; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (23)

Polar-on-nonpolar epitaxy Kroemer, Herbert Journal of Crystal Growth, Vol. 81, Issue 1-4 https://doi.org/10.1016/0022-0248(87)90391-5	journal	February 1987
Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates Takagi, Y.; Yonezu, H.; Samonji, K. Journal of Crystal Growth, Vol. 187, Issue 1 https://doi.org/10.1016/S0022-0248(97)00862-2	journal	April 1998
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs Kurtz, Steven R.; Allerman, A. A.; Jones, E. D. Applied Physics Letters, Vol. 74, Issue 5 https://doi.org/10.1063/1.123105	journal	February 1999
Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Yang, X.; Jurkovic, M. J.; Heroux, J. B. Applied Physics Letters, Vol. 75, Issue 2 https://doi.org/10.1063/1.124311	journal	July 1999
Nature of the fundamental band gap in GaNxP1−x alloys Shan, W.; Walukiewicz, W.; Yu, K. M. Applied Physics Letters, Vol. 76, Issue 22 https://doi.org/10.1063/1.126597	journal	May 2000
Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs Suemune, I.; Uesugi, K.; Walukiewicz, W. Applied Physics Letters, Vol. 77, Issue 19 https://doi.org/10.1063/1.1322633	journal	November 2000
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells Kaschner, A.; Lüttgert, T.; Born, H. Applied Physics Letters, Vol. 78, Issue 10 https://doi.org/10.1063/1.1355014	journal	March 2001
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Dislocation-free GaAs_yP_1−x−yN_x/GaP_0.98N_0.02 quantum-well structure lattice- matched to a Si substrate Fujimoto, Yasuhiro; Yonezu, Hiroo; Utsumi, Atsushi Applied Physics Letters, Vol. 79, Issue 9, p. 1306-1308 https://doi.org/10.1063/1.1395519	journal	August 2001
Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems Momose, Kenji; Yonezu, Hiroo; Fujimoto, Yasuhiro Applied Physics Letters, Vol. 79, Issue 25 https://doi.org/10.1063/1.1425451	journal	December 2001
Band parameters for nitrogen-containing semiconductors Vurgaftman, I.; Meyer, J. R. Journal of Applied Physics, Vol. 94, Issue 6 https://doi.org/10.1063/1.1600519	journal	September 2003
Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys Plaza, J.; Castaño, J. L.; García, B. J. Applied Physics Letters, Vol. 86, Issue 12 https://doi.org/10.1063/1.1891293	journal	March 2005
Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy Grassman, T. J.; Brenner, M. R.; Rajagopalan, S. Applied Physics Letters, Vol. 94, Issue 23 https://doi.org/10.1063/1.3154548	journal	June 2009
Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium Aït‐Lhouss, M.; Castaño, J. L.; García, B. J. Journal of Applied Physics, Vol. 78, Issue 9 https://doi.org/10.1063/1.359651	journal	November 1995
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon Nguyen Thanh, T.; Robert, C.; Guo, W. Journal of Applied Physics, Vol. 112, Issue 5 https://doi.org/10.1063/1.4751024	journal	September 2012
III N V semiconductors for solar photovoltaic applications Geisz, J. F.; Friedman, D. J. Semiconductor Science and Technology, Vol. 17, Issue 8 https://doi.org/10.1088/0268-1242/17/8/305	journal	July 2002
Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells Kudrawiec, R.; Luce, A. V.; Gladysiewicz, M. Physical Review Applied, Vol. 1, Issue 3 https://doi.org/10.1103/PhysRevApplied.1.034007	journal	April 2014
Band lineups and deformation potentials in the model-solid theory Van de Walle, Chris G. Physical Review B, Vol. 39, Issue 3 https://doi.org/10.1103/PhysRevB.39.1871	journal	January 1989
Band anticrossing in GaP 1 − x N x alloys Wu, J.; Walukiewicz, W.; Yu, K. M. Physical Review B, Vol. 65, Issue 24 https://doi.org/10.1103/PhysRevB.65.241303	journal	May 2002
STM characterization of the Si-P heterodimer Curson, N. J.; Schofield, S. R.; Simmons, M. Y. Physical Review B, Vol. 69, Issue 19 https://doi.org/10.1103/PhysRevB.69.195303	journal	May 2004
Band Anticrossing in GaInNAs Alloys Shan, W.; Walukiewicz, W.; Ager, J. W. Physical Review Letters, Vol. 82, Issue 6 https://doi.org/10.1103/PhysRevLett.82.1221	journal	February 1999
Chemical beam epitaxial growth of GaAs[sub 1−x]P[sub x] on GaAs (100) substrates Wildt, D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 4 https://doi.org/10.1116/1.590091	journal	July 1998
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance Kondow, Masahiko; Uomi, Kazuhisa; Niwa, Atsuko Japanese Journal of Applied Physics, Vol. 35, Issue Part 1, No. 2B https://doi.org/10.1143/JJAP.35.1273	journal	February 1996

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