Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn

Lapa, Pavel N.; Roshchin, Igor V.; Ding, Junjia; Pearson, John. E.; Novosad, Valentine; Jiang, J. S.; Hoffmann, Axel

doi:10.1103/PhysRevB.95.020409

Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn

Journal Article · Tue Jan 17 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.020409· OSTI ID:1352609

Lapa, Pavel N. ^[1]; Roshchin, Igor V. ^[2]; Ding, Junjia ^[3]; Pearson, John. E. ^[3]; Novosad, Valentine ^[3]; Jiang, J. S. ^[3]; Hoffmann, Axel ^[3]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Texas A&M Univ., College Station, TX (United States). Dept. of Physics and Astronomy
Texas A&M Univ., College Station, TX (United States). Dept. of Physics and Astronomy; Texas A&M Univ., College Station, TX (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division

Here we observed and studied pinned uncompensated magnetization in an antiferromagnet using magnetoresistance measurements. For this, we developed antiferromagnet-ferromagnet spin valves (AFSVs) that consist of an antiferromagnetic layer and a ferromagnetic one, separated by a nonmagnetic conducting spacer. In an AFSV, the uncompensated magnetization in the antiferromagnet affects scattering of spin-polarized electrons giving rise to giant magnetoresitance (GMR). By measuring angular dependence of AFSVs' resistance, we detected pinned uncompensated magnetization responsible for the exchange bias effect in an antiferromagnet- only exchange bias system Cu/FeMn/Cu. The fact that GMR measured in this system persists up to 110 kOe indicates that the scattering occurs on strongly pinned uncompensated magnetic moments in FeMn. This strong pinning can be explained if this pinned uncompensated magnetization is a thermodynamically stable state and coupled to the antiferromagnetic order parameter. Finally, using the AFSV technique, we confirmed that the two interfaces between FeMn and Cu are magnetically different: The uncompensated magnetization is pinned only at the interface with the bottom Cu layer.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1352609

Alternate ID(s):: OSTI ID: 1339766

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 2 Vol. 95; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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