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Title: Atomic structure considerations for the low-temperature opacity of Sn

Journal Article · · High Energy Density Physics
 [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Kansas State Univ., Manhattan, KS (United States). J.R. Macdonald Lab.

Here, we have begun a preliminary investigation into the opacity of Sn at low temperatures (< 50 eV). The emissivity and opacity of Sn is a crucial factor in determining the utility of Sn in EUV lithography, with numerous industrial implications. To this end, we have been exploring the accuracy of some approximations used in opacity models for the relevant ion stages of Sn (neutral through ~ 18 times ionized). We also find that the use of intermediate-coupling, as compared to full configuration-interaction, is not adequate to obtain accurate line positions of the important bound-bound transitions in Sn. One requires full configuration-interaction to properly describe the strong mixing between the various n=4 sub-shells that give rise to the Δn= 0 transitions that dominate the opacity spectrum at low temperatures. Furthermore, since calculations that include full configuration-interaction for large numbers of configurations quickly become computationally prohibitive, we have explored hybrid calculations, in which full configuration-interaction is retained for the most important transitions, while intermediate-coupling is employed for all other transitions. After extensive exploration of the atomic structure properties, local-thermodynamic-equilibrium (LTE) opacities are generated using the ATOMIC code at selected temperatures and densities and compared to experiment.

Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1352383
Alternate ID(s):
OSTI ID: 1419534
Report Number(s):
LA-UR-17-21866; TRN: US1700562
Journal Information:
High Energy Density Physics, Vol. 23, Issue C; ISSN 1574-1818
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

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Cited By (5)

Spectral characterization of an industrial EUV light source for nanolithography journal November 2019
Short-wavelength out-of-band EUV emission from Sn laser-produced plasma journal January 2018
Physics of laser-driven tin plasma sources of EUV radiation for nanolithography journal August 2019
Radiation transport and scaling of optical depth in Nd:YAG laser-produced microdroplet-tin plasma journal September 2019
Short-wavelength out-of-band EUV emission from Sn laser-produced plasma text January 2017

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