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Title: neutron-Induced Failures in semiconductor Devices

Abstract

Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

Authors:
 [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346851
Report Number(s):
LA-UR-17-22103
DOE Contract Number:
AC52-06NA25396
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Radiation effects

Citation Formats

Wender, Stephen Arthur. neutron-Induced Failures in semiconductor Devices. United States: N. p., 2017. Web. doi:10.2172/1346851.
Wender, Stephen Arthur. neutron-Induced Failures in semiconductor Devices. United States. doi:10.2172/1346851.
Wender, Stephen Arthur. Mon . "neutron-Induced Failures in semiconductor Devices". United States. doi:10.2172/1346851. https://www.osti.gov/servlets/purl/1346851.
@article{osti_1346851,
title = {neutron-Induced Failures in semiconductor Devices},
author = {Wender, Stephen Arthur},
abstractNote = {Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together},
doi = {10.2172/1346851},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Mar 13 00:00:00 EDT 2017},
month = {Mon Mar 13 00:00:00 EDT 2017}
}

Technical Report:

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  • This slide presentation explores single event effect, environmental neutron flux, system response, the Los Alamos Neutron Science Center (LANSCE) neutron testing facility, examples of SEE measurements, and recent interest in thermal neutrons.
  • The objective of this program phase was to provide an effective means of purchasing semiconductor devices whose neutron-induced response is within known and acceptable limits. The scope of the effort was limited to those procedures for the neutron environment for bipolar transistors, temperature-compensated reference diodes, TTL(54/74) series digital integrated circuits, 741-type operational amplifiers and junction field effects transistors(JFET's). This final report covers the method by which the program objectives were met and provides background information for the companion document 'Hardness Assurance Guidelines for Displacement Effects for Bipolar Devices' (HDL-CR-78-135-1). Specifically this final report covers background lot sample statistical methods, assessesmore » existing CRIC experimental neutron device data, and provides the background rationale for the selection of the Hardness Assurance controls.« less
  • The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompassesmore » bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.« less