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Title: neutron-Induced Failures in semiconductor Devices

Abstract

Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

Authors:
 [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346851
Report Number(s):
LA-UR-17-22103
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Radiation effects

Citation Formats

Wender, Stephen Arthur. neutron-Induced Failures in semiconductor Devices. United States: N. p., 2017. Web. doi:10.2172/1346851.
Wender, Stephen Arthur. neutron-Induced Failures in semiconductor Devices. United States. doi:10.2172/1346851.
Wender, Stephen Arthur. Mon . "neutron-Induced Failures in semiconductor Devices". United States. doi:10.2172/1346851. https://www.osti.gov/servlets/purl/1346851.
@article{osti_1346851,
title = {neutron-Induced Failures in semiconductor Devices},
author = {Wender, Stephen Arthur},
abstractNote = {Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together},
doi = {10.2172/1346851},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Mar 13 00:00:00 EDT 2017},
month = {Mon Mar 13 00:00:00 EDT 2017}
}

Technical Report:

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