Growth methods for controlled large-area fabrication of high-quality graphene analogs

Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun

Title: Growth methods for controlled large-area fabrication of high-quality graphene analogs

Patent · Tue Feb 28 00:00:00 EST 2017

OSTI ID:1345374

Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun

In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-09ER46554

Assignee:: WILLIAM MARSH RICE UNIVERSITY

Patent Number(s):: 9,580,834

Application Number:: 14/203,958

OSTI ID:: 1345374

Resource Relation:: Patent File Date: 2014 Mar 11

Country of Publication:: United States

Language:: English

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