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Title: Infrared control coating of thin film devices

Abstract

Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

Inventors:
; ;
Publication Date:
Research Org.:
ITN ENERGY SYSTEMS, INC., Littleton, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345221
Patent Number(s):
9,581,741
Application Number:
14/293,934
Assignee:
ITN ENERGY SYSTEMS, INC. DOEEE
DOE Contract Number:
EE0006348
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jun 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Berland, Brian Spencer, Stowell, Jr., Michael Wayne, and Hollingsworth, Russell. Infrared control coating of thin film devices. United States: N. p., 2017. Web.
Berland, Brian Spencer, Stowell, Jr., Michael Wayne, & Hollingsworth, Russell. Infrared control coating of thin film devices. United States.
Berland, Brian Spencer, Stowell, Jr., Michael Wayne, and Hollingsworth, Russell. Tue . "Infrared control coating of thin film devices". United States. doi:. https://www.osti.gov/servlets/purl/1345221.
@article{osti_1345221,
title = {Infrared control coating of thin film devices},
author = {Berland, Brian Spencer and Stowell, Jr., Michael Wayne and Hollingsworth, Russell},
abstractNote = {Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 28 00:00:00 EST 2017},
month = {Tue Feb 28 00:00:00 EST 2017}
}

Patent:

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