Lateral electrochemical etching of III-nitride materials for microfabrication

Han, Jung

Lateral electrochemical etching of III-nitride materials for microfabrication

Patent · Tue Feb 28 04:00:00 EST 2017

OSTI ID:1345219

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

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Research Organization:: Yale University, New Haven, CT (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-07ER46387

Assignee:: Yale University

Patent Number(s):: 9,583,353

Application Number:: 13/923,248

OSTI ID:: 1345219

Country of Publication:: United States

Language:: English

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