Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes [Detection and modeling of leakage current in AlGaN-based UV LEDs]

Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jr., Jonathan J.; Smith, Michael L.; Armstrong, Andrew M.

doi:10.1063/1.4908543

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes [Detection and modeling of leakage current in AlGaN-based UV LEDs]

Journal Article · Sun Mar 01 23:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4908543· OSTI ID:1344469

Moseley, Michael W. ^[1]; Allerman, Andrew A. ^[1]; Crawford, Mary H. ^[1]; Wierer, Jr., Jonathan J. ^[1]; Smith, Michael L. ^[1]; Armstrong, Andrew M. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the forward-bias IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. As a result, the circuit model is modified to account for another p-n junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the forward-bias IV characteristics of the leaky DUV-LED is achieved.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1344469

Report Number(s):: SAND--2014-19687J; 642731

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 117; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature Glaab, Johannes; Ploch, Christian; Kelz, Rico Journal of Applied Physics, Vol. 118, Issue 9 https://doi.org/10.1063/1.4929656	journal	September 2015
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