AlGaN multiple quantum well based deep UV LEDs and their applications
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journal
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May 2006 |
III–Nitride UV Devices
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journal
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October 2005 |
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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journal
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May 2006 |
Mid-Ultraviolet Light-Emitting Diode Detects Dipicolinic Acid
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journal
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November 2004 |
Ultraviolet light-emitting diodes in water disinfection
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journal
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February 2009 |
10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
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journal
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December 2004 |
Modulation of the immune system by UV radiation: more than just the effects of vitamin D?
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journal
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August 2011 |
Master Recording for High-Density Disk Using 248 nm Laser Beam Recorder
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journal
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March 2002 |
Efficient silicon-on-insulator fiber coupler fabricated using 248-nm-deep UV lithography
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journal
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December 2005 |
AlGaN/GaN quantum well ultraviolet light emitting diodes
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journal
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September 1998 |
Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
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journal
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July 2000 |
Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
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journal
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June 2001 |
Novel UV devices on high-quality AlGaN using grooved underlying layer
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journal
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May 2009 |
Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
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journal
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March 2010 |
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
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journal
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June 2010 |
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
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journal
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February 2010 |
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
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journal
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February 2010 |
Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates
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journal
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July 2010 |
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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journal
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July 2012 |
Advances in group III-nitride-based deep UV light-emitting diode technology
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journal
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December 2010 |
Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals
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journal
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August 2013 |
UV transparent single-crystalline bulk AlN substrates
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journal
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January 2010 |
AlGaN Deep-Ultraviolet Light-Emitting Diodes
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journal
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October 2005 |
231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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journal
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August 2007 |
Effect of the AIN nucleation layer growth on AlN material quality
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journal
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November 2008 |
The role of threading dislocations in the physical properties of GaN and its alloys
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journal
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December 1999 |
Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
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journal
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August 2003 |
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
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journal
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March 2001 |
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
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journal
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July 2002 |
Light emitting diodes reliability review
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journal
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May 2012 |
Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes
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journal
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February 2014 |
Microstructural origin of leakage current in GaN/InGaN light-emitting diodes
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journal
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March 2004 |
Origin of forward leakage current in GaN-based light-emitting devices
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journal
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September 2006 |
Investigation of leakage current paths in n-GaN by conductive atomic force microscopy
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journal
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March 2014 |
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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journal
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June 2005 |
Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
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journal
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January 2002 |
Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
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journal
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February 2003 |
The structure and properties of dislocations in GaN
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journal
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April 2006 |
Origin of hexagonal-shaped etch pits formed in (0001) GaN films
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journal
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July 2000 |
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
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journal
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October 1995 |
Observation of nanopipes in α-GaN crystals
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journal
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June 1995 |
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire
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journal
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December 1997 |
The structure and optoelectronic properties of dislocations in GaN
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journal
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November 2000 |
Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
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journal
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December 2002 |
Open core threading dislocations in GaN grown by hydride vapour phase epitaxy
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journal
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October 2006 |
Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes
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journal
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December 1998 |
Interaction of Oxygen with Threading Dislocations in GaN
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journal
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January 1999 |
Defect-selective etching of GaN in a modified molten bases system
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journal
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December 2002 |
Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
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journal
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July 1998 |
Recent advances in defect-selective etching of GaN
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journal
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March 2000 |
Nanopipes in GaN: photo-etching and TEM study
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journal
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July 2004 |
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
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journal
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November 2000 |
Acid etching for accurate determination of dislocation density in GaN
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journal
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May 2002 |