Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

Conference · Mon Nov 21 04:00:00 EST 2016

DOI:https://doi.org/10.1109/PVSC.2016.7749583· OSTI ID:1344213

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Young, Matthew; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

• Research Organization: NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1344213
• Report Number(s): NREL/CP-5J00-65827
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ion implantation
passivated contacts
plasma immersion
solar cells