Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

doi:10.1016/j.solmat.2016.05.044

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Journal Article · Wed Jun 01 04:00:00 EDT 2016 · Solar Energy Materials and Solar Cells

DOI:https://doi.org/10.1016/j.solmat.2016.05.044· OSTI ID:1328644

Young, David L. ^[1]; Nemeth, William ^[1]; LaSalvia, Vincenzo ^[1]; Page, Matthew R. ^[1]; Theingi, San ^[1]; Aguiar, Jeffery ^[1]; Lee, Benjamin G. ^[1]; Stradins, Paul ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO₂/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm^-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV_oc) values of 730 mV with J_o values of 2 fA/cm². Samples doped with B₂H₆ gave iV_oc values of 690 mV and J_o values of 24 fA/cm², outperforming BF₃ doping, which gave iV_oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1328644

Alternate ID(s):: OSTI ID: 1396784

Report Number(s):: NREL/JA--5J00-66528

Journal Information:: Solar Energy Materials and Solar Cells, Journal Name: Solar Energy Materials and Solar Cells Journal Issue: P1 Vol. 158; ISSN 0927-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
36 MATERIALS SCIENCE
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