Method of manufacturing a hybrid emitter all back contact solar cell
Patent
·
OSTI ID:1343277
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.
- Research Organization:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation
- Patent Number(s):
- 9,564,551
- Application Number:
- 15/067,960
- OSTI ID:
- 1343277
- Country of Publication:
- United States
- Language:
- English
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