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Method of manufacturing a hybrid emitter all back contact solar cell

Patent ·
OSTI ID:1343277
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.
Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation
Patent Number(s):
9,564,551
Application Number:
15/067,960
OSTI ID:
1343277
Country of Publication:
United States
Language:
English

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