Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1340255
- Report Number(s):
- SAND-2016-12025J; 649494
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 35, Issue 2; ISSN 0734-2101
- Publisher:
- American Vacuum SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Electron cyclotron resonance plasma etching of AlGaN in Cl{sub 2}/Ar and BCl{sub 3}/Ar plasmas
Inductively coupled plasma etching of III{endash}V antimonides in BCl{sub 3}/Ar and Cl{sub 2}/Ar