Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy

Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; Scrymgeour, David A.; Maria, Jon-Paul; Paisley, Elizabeth A.; Kitahara, Andrew R.

doi:10.1007/s10853-016-0402-x

Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy

Journal Article · Fri Sep 16 00:00:00 EDT 2016 · Journal of Materials Science

DOI:https://doi.org/10.1007/s10853-016-0402-x· OSTI ID:1338400

Ihlefeld, Jon F. ^[1]; Michael, Joseph R. ^[2]; McKenzie, Bonnie B. ^[2]; Scrymgeour, David A. ^[3]; Maria, Jon-Paul ^[4]; Paisley, Elizabeth A. ^[1]; Kitahara, Andrew R. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Electronic, Optical and Nano Materials Dept.
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials Performance and Characterization Dept.
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Microsystems Science and Technology Center
North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering

We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yield can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1338400

Report Number(s):: SAND--2016-12845J; 650062

Journal Information:: Journal of Materials Science, Journal Name: Journal of Materials Science Journal Issue: 2 Vol. 52; ISSN 0022-2461

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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