Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.; Oh, Sang H.; DenBaars, Steve P.; Liu, Sheng; Brener, Igal; Feezell, Daniel F.

doi:10.1364/OE.25.002178

Title: Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Journal Article · Thu Jan 26 00:00:00 EST 2017 · Optics Express

DOI:https://doi.org/10.1364/OE.25.002178· OSTI ID:1337779

Okur, Serdal ^[1]; Nami, Mohsen ^[1]; Rishinaramangalam, Ashwin K. ^[1]; Oh, Sang H. ^[2]; DenBaars, Steve P. ^[2]; Liu, Sheng ^[3]; Brener, Igal ^[3]; Feezell, Daniel F. ^[1]

Univ. of New Mexico, Albuquerque, NM (United States)
Univ. of California, Santa Barbara, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($$20\bar{2}$$$$\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\bar{2}$$$$\bar{1}$$) LEDs.

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Research Organization:: Univ. of New Mexico, Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Contributing Organization:: Sandia National Laboratories, Solid State Lighting and Energy Electronics Center (SSLEEC), University of New Mexico

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1337779

Journal Information:: Optics Express, Vol. 25, Issue 3; ISSN 1094-4087

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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