Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance
Patent
·
OSTI ID:1337626
A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.
- Research Organization:
- International Business Machines Corporation, Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 9,530,908
- Application Number:
- 14/540,986
- OSTI ID:
- 1337626
- Country of Publication:
- United States
- Language:
- English
Sulfurization induced surface constitution and its correlation to the performance of solution-processed Cu2ZnSn(S,Se)4 solar cells
|
journal | September 2014 |
Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
|
journal | November 2013 |
Effects of sodium on electrical properties in Cu 2 ZnSnS 4 single crystal
|
journal | April 2014 |
The path towards a high-performance solution-processed kesterite solar cell
|
journal | June 2011 |
Similar Records
Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance
Epitaxial growth of CZT(S,Se) on silicon
Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices
Patent
·
2019
·
OSTI ID:1525045
Epitaxial growth of CZT(S,Se) on silicon
Patent
·
2016
·
OSTI ID:1243034
Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices
Patent
·
2019
·
OSTI ID:1600168