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Title: Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance

Abstract

A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1525045
Patent Number(s):
10,230,014
Application Number:
15/342,618
Assignee:
International Business Machines Corporation (Armonk, NY)
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016-11-03
Country of Publication:
United States
Language:
English

Citation Formats

Chang, Liang-Yi, Gershon, Talia S., Haight, Richard A., and Lee, Yun Seong. Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance. United States: N. p., 2019. Web.
Chang, Liang-Yi, Gershon, Talia S., Haight, Richard A., & Lee, Yun Seong. Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance. United States.
Chang, Liang-Yi, Gershon, Talia S., Haight, Richard A., and Lee, Yun Seong. Tue . "Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance". United States. https://www.osti.gov/servlets/purl/1525045.
@article{osti_1525045,
title = {Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance},
author = {Chang, Liang-Yi and Gershon, Talia S. and Haight, Richard A. and Lee, Yun Seong},
abstractNote = {A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

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Works referenced in this record:

Effusion cell
patent, December 2000


Chalcogenide solutions
patent, July 2014


Space solar cell
patent, May 2001


Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
patent, April 2013