Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

doi:10.1038/ncomms12688

Title: Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Journal Article · Thu Sep 01 00:00:00 EDT 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms12688· OSTI ID:1337163

Li, Peng ^[1]; Liu, Tao ^[1]; Chang, Houchen ^[1]; Kalitsov, Alan ^[2]; Zhang, Wei ^[3]; Csaba, Gyorgy ^[4]; Li, Wei ^[1]; Richardson, Daniel ^[1]; DeMann, August ^[1]; Rimal, Gaurab ^[5]; Dey, Himadri ^[4]; Jiang, J. S. ^[3]; Porod, Wolfgang ^[4]; Field, Stuart B. ^[1]; Tang, Jinke ^[5]; Marconi, Mario C. ^[1]; Hoffmann, Axel ^[3]; Mryasov, Oleg ^[2]; Wu, Mingzhong ^[1]

Colorado State Univ., Fort Collins, CO (United States)
Univ. of Alabama, Tuscaloosa, AL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
Univ. of Notre Dame, Notre Dame, IN (United States)
Univ. of Wyoming, Laramie, WY (United States)

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe₁₂O₁₉ bilayer where the BaFe₁₂O₁₉ layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe₁₂O₁₉ film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe₁₂O₁₉ film by as much as about 500 Oe when the film is switched with an out-of-plane field.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)

Sponsoring Organization:: Materials Sciences and Engineering Division; Center for Spintronic Materials Interfaces and Novel Architectures (C-SPIN); Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1337163

Journal Information:: Nature Communications, Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 75 works

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