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A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]
Journal Article·· Semiconductor Science and Technology
Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu2SnS3. We contrast our findings on Cu2SnS3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cu2ZnSnS4 and Cu(In,Ga)Se2. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu2SnS3 and Cu2ZnSnS4, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.
Baranowski, Lauryn L., et al. "A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]." Semiconductor Science and Technology, vol. 31, no. 12, Nov. 2016. https://doi.org/10.1088/0268-1242/31/12/123004
Baranowski, Lauryn L., Zawadzki, Pawel, Lany, Stephan, Toberer, Eric S., & Zakutayev, Andriy (2016). A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]. Semiconductor Science and Technology, 31(12). https://doi.org/10.1088/0268-1242/31/12/123004
Baranowski, Lauryn L., Zawadzki, Pawel, Lany, Stephan, et al., "A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]," Semiconductor Science and Technology 31, no. 12 (2016), https://doi.org/10.1088/0268-1242/31/12/123004
@article{osti_1335216,
author = {Baranowski, Lauryn L. and Zawadzki, Pawel and Lany, Stephan and Toberer, Eric S. and Zakutayev, Andriy},
title = {A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]},
annote = {Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu2SnS3. We contrast our findings on Cu2SnS3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cu2ZnSnS4 and Cu(In,Ga)Se2. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu2SnS3 and Cu2ZnSnS4, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.},
doi = {10.1088/0268-1242/31/12/123004},
url = {https://www.osti.gov/biblio/1335216},
journal = {Semiconductor Science and Technology},
issn = {ISSN 0268-1242},
number = {12},
volume = {31},
place = {United States},
publisher = {IOP Publishing},
year = {2016},
month = {11}}
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 369, Issue 1942https://doi.org/10.1098/rsta.2010.0348
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 371, Issue 1996, Article No. 20110432https://doi.org/10.1098/rsta.2011.0432