Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

doi:10.1063/1.4966209

Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Journal Article · Tue Nov 01 00:00:00 EDT 2016 · APL Materials

DOI:https://doi.org/10.1063/1.4966209· OSTI ID:1330596

Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.;

; Metzger, Wyatt K.

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10¹⁶ cm^-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10¹⁶ cm^-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl₂ or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08-GO28308; AC36-08GO28308

OSTI ID:: 1330596

Alternate ID(s):: OSTI ID: 1332487; OSTI ID: 1421266

Report Number(s):: NREL/JA-5K00-66107

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 4 Journal Issue: 11; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 46 works

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Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells Metzger, W. K.; Grover, S.; Lu, D. Nature Energy, Vol. 4, Issue 10 https://doi.org/10.1038/s41560-019-0446-7	journal	August 2019
Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques Ščajev, Patrik; Miasojedovas, Saulius; Mekys, Algirdas Journal of Applied Physics, Vol. 123, Issue 2 https://doi.org/10.1063/1.5010780	journal	January 2018
Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study Duenow, Joel N.; Metzger, Wyatt K. Journal of Applied Physics, Vol. 125, Issue 5 https://doi.org/10.1063/1.5063799	journal	February 2019
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping McCandless, Brian E.; Buchanan, Wayne A.; Thompson, Christopher P. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-32746-y	journal	September 2018
Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe Colegrove, E.; Yang, J-H; Harvey, S. P. Journal of Physics D: Applied Physics, Vol. 51, Issue 7 https://doi.org/10.1088/1361-6463/aaa67e	journal	January 2018
Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A. Applied Physics Letters, Vol. 111, Issue 23 https://doi.org/10.1063/1.4999011	journal	December 2017

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