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Title: Exceeding 20% Efficiency with in situ Group V Doping in Polycrystalline CdTe Solar Cells

Journal Article · · Nature Energy

CdTe-based solar technology has achieved one of the lowest levelized costs of electricity among all energy sources as well as state-of-the-art field stability. Yet, there is still ample headroom to improve. For decades, mainstream technology has combined fast CdTe deposition with a CdCl2 anneal and Cu doping. The resulting defect chemistry is strongly compensated and limits the useful hole density to ~10^14 cm-3, creating a ceiling for fill factor, photovoltage and efficiency. In addition, Cu easily changes energy states and diffuses spatially, creating a risk of instabilities that must be managed with care. Here, we demonstrate a significant shift by doping polycrystalline CdSexTe1-x and CdTe films with As while removing Cu entirely from the solar cell. The absorber majority-carrier density is increased by orders of magnitude to 10^16-10^17 cm-3 without compromising the lifetime, and is coupled with a high photocurrent greater than 30 mA cm-2. We demonstrate pathways for fast dopant incorporation in polycrystalline thin films, improved stability and 20.8% solar cell efficiency.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1559780
Report Number(s):
NREL/JA-5K00-73704
Journal Information:
Nature Energy, Vol. 4
Country of Publication:
United States
Language:
English

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