Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates

Chen, Jianyi; Tang, Wei; Tian, Bingbing; Liu, Bo; Zhao, Xiaoxu; Liu, Yanpeng; Ren, Tianhua; Liu, Wei; Geng, Dechao; Jeong, Hu Young; Shin, Hyeon Suk; Zhou, Wu; Loh, Kian Ping

doi:10.1002/advs.201600033

Title: Chemical vapor deposition of high-quality large-sized MoS₂ crystals on silicon dioxide substrates

Journal Article · Thu Mar 31 00:00:00 EDT 2016 · Advanced Science

DOI:https://doi.org/10.1002/advs.201600033· OSTI ID:1331100

Chen, Jianyi ^[1]; Tang, Wei ^[1]; Tian, Bingbing ^[1]; Liu, Bo ^[1]; Zhao, Xiaoxu ^[1]; Liu, Yanpeng ^[1]; Ren, Tianhua ^[1]; Liu, Wei ^[1]; Geng, Dechao ^[1]; Jeong, Hu Young ^[2]; Shin, Hyeon Suk ^[2]; Zhou, Wu ^[3]; Loh, Kian Ping ^[1]

National Univ. of Singapore (Singapore)
Ulsan National Institute of Science and Technology (UNIST), Ulsan (Republic of Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Large-sized MoS₂ crystals can be grown on SiO₂/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS₂ crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. Additionally, the electron mobility of the MoS₂ crystals can reach ≈30 cm² V^–1 s^–1, which is comparable to those of exfoliated flakes.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1331100

Journal Information:: Advanced Science, Vol. 3, Issue 8; ISSN 2198-3844

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 92 works

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