Elucidating PID Degradation Mechanisms and In Situ Dark I–V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

Journal Article · Tue Nov 01 00:00:00 EDT 2016 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2016.2598269· OSTI ID:1330945

Hacke, Peter; Spataru, Sergiu; Johnston, Steve; Terwilliger, Kent; VanSant, Kaitlyn; Kempe, Michael; Wohlgemuth, John; Kurtz, Sarah; Olsson, Anders; Propst, Michelle

A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1330945
• Report Number(s): NREL/JA-5J00-65810
• Journal Information: IEEE Journal of Photovoltaics, Vol. 6, Issue 6; ISSN 2156-3381
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
potential-induced degradation
CdTe
thin-film modules
high voltage
degradation modeling