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Title: Thermoelectric properties of n-type half-Heusler compounds (Hf0.25Zr0.75)1–Nb NiSn

Journal Article · · Acta Materialia

Sponsoring Organization:
USDOE
OSTI ID:
1326446
Journal Information:
Acta Materialia, Journal Name: Acta Materialia Vol. 113 Journal Issue: C; ISSN 1359-6454
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 37 works
Citation information provided by
Web of Science

References (36)

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Effect of Hf Concentration on Thermoelectric Properties of Nanostructured N-Type Half-Heusler Materials Hf x Zr 1-x NiSn 0.99 Sb 0.01 journal May 2013
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Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75−xTixZr0.25NiSn0.99Sb0.01 journal January 2013
High Band Degeneracy Contributes to High Thermoelectric Performance in p-Type Half-Heusler Compounds journal August 2014
Enhancement in Thermoelectric Figure-Of-Merit of an N-Type Half-Heusler Compound by the Nanocomposite Approach journal May 2011
Complex thermoelectric materials journal February 2008
Multiple-Filled Skutterudites: High Thermoelectric Figure of Merit through Separately Optimizing Electrical and Thermal Transports journal May 2011
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Improved thermoelectric performance of (Zr 0.3 Hf 0.7 )NiSn half-Heusler compounds by Ta substitution journal May 2014
Recent advances in thermoelectric nanocomposites journal January 2012
The intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials journal November 2014
Electronic structure of Zr–Ni–Sn systems: role of clustering and nanostructures in half-Heusler and Heusler limits journal June 2014
Recent progress of half-Heusler for moderate temperature thermoelectric applications journal October 2013
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Electronic and Local Crystal Structures of the ZrNiSn Half-Heusler Thermoelectric Material journal January 2014
Convergence of electronic bands for high performance bulk thermoelectrics journal May 2011
A new n-type half-Heusler thermoelectric material NbCoSb journal October 2015
Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds journal January 2012
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Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C journal January 2006
Evaluation of Half-Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties journal October 2008
High-temperature thermoelectric properties of Nb-doped MNiSn (M=Ti, Zr) half-Heusler compound journal February 2009
Simultaneous Large Enhancements in Thermopower and Electrical Conductivity of Bulk Nanostructured Half-Heusler Alloys journal November 2011
Relationship between thermoelectric figure of merit and energy conversion efficiency journal June 2015
Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites journal January 2012
Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration journal February 1998
In-gap Electronic States Responsible for the Excellent Thermoelectric Properties of Ni-based Half-Heusler Alloys journal July 2008
Electronic and phonon transport in Sb-doped Ti 0.1 Zr 0.9 Ni 1+x Sn 0.975 Sb 0.025 nanocomposites journal January 2014
Synthesis and thermoelectric properties of n-type half-Heusler compound VCoSb with valence electron count of 19 journal January 2016
High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys journal May 2008
Optimization of the carrier concentration in phase-separated half-Heusler compounds journal January 2014
Nanoscale structural heterogeneity in Ni-rich half-Heusler TiNiSn journal October 2014
Thermoelectric properties of directionally solidified half-Heusler compound NbCoSn alloys journal January 2008
Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1−x)/2 V (1−x)/2 Ta x CoSb journal January 2015
Transport properties of pure and doped M NiSn ( M =Zr, Hf) journal April 1999