Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal
Here, we present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-76SF00515; PHY-1068662
- OSTI ID:
- 1260299
- Alternate ID(s):
- OSTI ID: 1307330
- Report Number(s):
- AC02-76SF00515; PRABFM; 071001
- Journal Information:
- Physical Review Accelerators and Beams, Journal Name: Physical Review Accelerators and Beams Vol. 19 Journal Issue: 7; ISSN 2469-9888
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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