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Title: Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

Abstract

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1303254
Patent Number(s):
9,425,249
Application Number:
13/990,743
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CA) NREL
DOE Contract Number:
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 01
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States: N. p., 2016. Web.
Norman, Andrew. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers. United States.
Norman, Andrew. Tue . "Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers". United States. doi:. https://www.osti.gov/servlets/purl/1303254.
@article{osti_1303254,
title = {Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers},
author = {Norman, Andrew},
abstractNote = {A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2016},
month = {Tue Aug 23 00:00:00 EDT 2016}
}

Patent:

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