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Title: Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

Abstract

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

Authors:
 [1];  [2];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1303002
Report Number(s):
BNL-112455-2016-JA
Journal ID: ISSN 2045-2322; R&D Project: MA509MACA; KC0203020
Grant/Contract Number:  
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Leng, X., Bozovic, I., and Bollinger, A. T. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films. United States: N. p., 2016. Web. doi:10.1038/srep31239.
Leng, X., Bozovic, I., & Bollinger, A. T. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films. United States. doi:10.1038/srep31239.
Leng, X., Bozovic, I., and Bollinger, A. T. Wed . "Purely electronic mechanism of electrolyte gating of indium tin oxide thin films". United States. doi:10.1038/srep31239. https://www.osti.gov/servlets/purl/1303002.
@article{osti_1303002,
title = {Purely electronic mechanism of electrolyte gating of indium tin oxide thin films},
author = {Leng, X. and Bozovic, I. and Bollinger, A. T.},
abstractNote = {Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.},
doi = {10.1038/srep31239},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Wed Aug 10 00:00:00 EDT 2016},
month = {Wed Aug 10 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
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