Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

Leng, X.; Bozovic, I.; Bollinger, A. T.

doi:10.1038/srep31239

Title: Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

Journal Article · Wed Aug 10 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep31239· OSTI ID:1303002

Leng, X. ^[1]; Bozovic, I. ^[2]; Bollinger, A. T. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)

Epitaxial indium tin oxide films have been grown on both LaAlO₃ and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1303002

Report Number(s):: BNL-112455-2016-JA; R&D Project: MA509MACA; KC0203020

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Electrolyte-Gated Oxides Bollinger, Anthony T.; Dubuis, Guy; Leng, Xiang Journal of Superconductivity and Novel Magnetism, Vol. 33, Issue 1 https://doi.org/10.1007/s10948-019-05313-3	journal	November 2019
Electrolyte-based ionic control of functional oxides Leighton, Chris Nature Materials, Vol. 18, Issue 1 https://doi.org/10.1038/s41563-018-0246-7	journal	December 2018
Rapid Fabrication of Graphene Field-Effect Transistors with Liquid-metal Interconnects and Electrolytic Gate Dielectric Made of Honey Ordonez, Richard C.; Hayashi, Cody K.; Torres, Carlos M. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-10043-4	journal	August 2017

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