Method for forming monolayer graphene-boron nitride heterostructures

Sutter, Peter Werner; Sutter, Eli Anguelova

Method for forming monolayer graphene-boron nitride heterostructures

Patent · Tue Aug 09 04:00:00 EDT 2016

OSTI ID:1289690

Sutter, Peter Werner; Sutter, Eli Anguelova

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-98CH10886

Assignee:: Brookhaven Science Associates, LLC (Upton, NY)

Patent Number(s):: 9,410,243

Application Number:: 14/453,314

OSTI ID:: 1289690

Country of Publication:: United States

Language:: English

References (15)

Graphene growth on epitaxial Ru thin films on sapphire Sutter, P. W.; Albrecht, P. M.; Sutter, E. A. Applied Physics Letters, Vol. 97, Issue 21 https://doi.org/10.1063/1.3518490	journal	November 2010
Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong Nano Letters, Vol. 12, Issue 2, p. 714-718 https://doi.org/10.1021/nl203635v	journal	January 2012
Real-Time Microscopy of Graphene Growth on Epitaxial Metal Films: Role of Template Thickness and Strain Sutter, Peter; Ciobanu, Cristian V.; Sutter, Eli Small, Vol. 8, Issue 14 https://doi.org/10.1002/smll.201200196	journal	April 2012
Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films Sutter, P.; Lahiri, J.; Zahl, P. Nano Letters, Vol. 13, Issue 1 https://doi.org/10.1021/nl304080y	journal	December 2012
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy Krivanek, Ondrej L.; Chisholm, Matthew F.; Nicolosi, Valeria Nature, Vol. 464, Issue 7288 https://doi.org/10.1038/nature08879	journal	March 2010
Chemical Vapor Deposition and Etching of High-Quality Monolayer Hexagonal Boron Nitride Films Sutter, Peter; Lahiri, Jayeeta; Albrecht, Peter ACS Nano, Vol. 5, Issue 9 https://doi.org/10.1021/nn202141k	journal	August 2011
Epitaxial graphene on ruthenium Sutter, Peter W.; Flege, Jan-Ingo; Sutter, Eli A. Nature Materials, Vol. 7, Issue 5, p. 406-411 https://doi.org/10.1038/nmat2166	journal	April 2008
Interface Formation in Monolayer Graphene-Boron Nitride Heterostructures Sutter, P.; Cortes, R.; Lahiri, J. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl302398m	journal	January 2012
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Visualizing Individual Nitrogen Dopants in Monolayer Graphene Zhao, L.; He, R.; Rim, K. T. Science, Vol. 333, Issue 6045 https://doi.org/10.1126/science.1208759	journal	August 2011
Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers Liu, Zheng; Song, Li; Zhao, Shizhen Nano Letters, Vol. 11, Issue 5 https://doi.org/10.1021/nl200464j	journal	May 2011
Atomic layers of hybridized boron nitride and graphene domains Ci, Lijie; Song, Li; Jin, Chuanhong Nature Materials, Vol. 9, Issue 5, p. 430-435 https://doi.org/10.1038/nmat2711	journal	February 2010
Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors Fiori, Gianluca; Betti, Alessandro; Bruzzone, Samantha ACS Nano, Vol. 6, Issue 3 https://doi.org/10.1021/nn300019b	journal	February 2012
Microscopy of Graphene Growth, Processing, and Properties Sutter, Peter; Sutter, Eli Advanced Functional Materials, Vol. 23, Issue 20, p. 2617-2634 https://doi.org/10.1002/adfm.201203426	journal	April 2013
Origin of half-semimetallicity induced at interfaces of C-BN heterostructures Pruneda, J. M. Physical Review B, Vol. 81, Issue 16 https://doi.org/10.1103/PhysRevB.81.161409	journal	April 2010

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