Electron beam - sheath interaction in RF discharges
Capacitively coupled rf discharges used for materials processing are typically operated at 1-100 mTorr with 50-1000 V applied at 13.56 MHz in a parallel plate chamber. Using PDP1, a 1d3v PIC simulation code, the authors find that an electron beam is generated by the expanding sheath. At low pressure this beam can cross the discharge to interact with the opposite sheath. Depending on the phase of the opposite sheath, the beam may be lost to the electrode or reflected back into the discharge with either a higher or lower energy. This strongly affects the ionization rate and discharge power balance. The phase of the opposite sheath when the electron beam arrives is a sensitive function of the discharge length. By changing the discharge length a resonant effect can be observed in the simulation.
- OSTI ID:
- 127891
- Report Number(s):
- CONF-920376--
- Journal Information:
- Bulletin of the American Physical Society, Journal Name: Bulletin of the American Physical Society Journal Issue: 9 Vol. 37; ISSN BAPSA6; ISSN 0003-0503
- Country of Publication:
- United States
- Language:
- English
Similar Records
A comparison of PIC simulation and experimental results in a capacitive RF discharge
PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching