Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer

Conference · Thu Sep 16 00:00:00 EDT 1999

OSTI ID:12716

BANDEY, HELEN L ^[1]; CERNOSEK, RICHARD W; HILLMAN, A R; MARTIN, STEPHEN J

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1. Sandia National Laboratories

This paper describes a new equivalent-circuit model for the thickness shear mode resonator with a surface viscoelastic layer operating near film resonance. The electrical impedance of the film is represented by a simple three-element parallel circuit containing a resistor, a capacitor, and an inductor. These elements describe the film's viscous power dissipation, elastic energy storage, and kinetic energy storage, respectively. Resonator response comparisons between this lumped-element model and the general transmission-line model show good agreement over a range of film phase conditions and not just near film resonance.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 12716
• Report Number(s): SAND99-0725C
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELASTICITY
IMPEDANCE
KINETIC ENERGY
MATHEMATICAL MODELS
QCM
RESONATORS
RESPONSE FUNCTIONS
SHEAR
THICKNESS
THICKNESS SHEAR MODE RESONATOR
VISCOELEASTICITY: EQUIVALENT-CIRCUIT MODEL
VISCOSITY