Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer
Conference
·
OSTI ID:12716
This paper describes a new equivalent-circuit model for the thickness shear mode resonator with a surface viscoelastic layer operating near film resonance. The electrical impedance of the film is represented by a simple three-element parallel circuit containing a resistor, a capacitor, and an inductor. These elements describe the film's viscous power dissipation, elastic energy storage, and kinetic energy storage, respectively. Resonator response comparisons between this lumped-element model and the general transmission-line model show good agreement over a range of film phase conditions and not just near film resonance.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 12716
- Report Number(s):
- SAND99-0725C; TRN: AH200120%%404
- Resource Relation:
- Conference: Eurosensors XIII, The Hague (NL), 09/12/1999--09/15/1999; Other Information: PBD: 16 Sep 1999
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:12716
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OSTI ID:12716