Matrix isolation studies of intermediates in the CVD synthesis of titanium nitride

Conference · Fri Dec 01 04:00:00 EST 1995

OSTI ID:126861

Everhart, J; Meininger, D; Ault, B ^[1]

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1. Univ. of Cincinnati, OH (United States)

Intermediates formed in the chemical vapor deposition of TiN films have been studied after trapping in argon matrices and cryogenic thin films at 14 K. For the TiCl{sub 4}/NH{sub 3} system, twin jet codeposition of these two reagents led to the formation and isolation of the 1:1 adduct TiCl{sub 4} NH{sub 3}. This species was characterized by several perturbed Ti-Cl stretching modes, shifted NH{sub 3} deformation and stretching modes, and the rocking mode of the coordinated NH{sub 3}. Variation in deposition conditions led to formation of the 1:2 adduct as well. Analogous experiments with (CH{sub 3}){sub 3}N and TiCl{sub 4} led to the stable TiCl{sub 4}. (CH{sub 3}){sub 3}N adduct. Experiments were also conducted using Ti(N(CH{sub 3}){sub 2}){sub 4} with gaseous NH{sub 3} as a catalyst. The presence of small amounts of added NH{sub 3} during deposition led to a dramatic reduction in the intensity of the parent titanium compound, and the growth of a number of product absorptions. Several of these are due to (CH{sub 3}){sub 2} NH, while the others have not yet been assigned. Additional studies are in progress at present.

• OSTI ID: 126861
• Report Number(s): CONF-950402--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
REACTION INTERMEDIATES
THIN FILMS
TITANIUM CHLORIDES
TITANIUM NITRIDES