Synthesis and characterization of InP and In{sub x}Ga{sub 1-x}P
Conference
·
OSTI ID:126855
- Univ. of California, Los Angeles, CA (United States); and others
The study of III-V semiconducting nanoparticles has until recently been rather limited. This work presents a novel technique for a solution phase synthesis of 2 to 20nm InP and In{sub x}Ga{sub 1-x} P nanocrystals. In utilizing size selective precipitation, narrow distributions of particle sizes with the same composition can be obtained, thereby allowing for size dependent phenomena to be studied. Powder XRD, Raman scattering, XPS, NMR, IR and UV/VIS absorption spectrophotometry were employed in observing these effects. TEM was used to confirm the fairly discrete size distributions. The Raman studies also showed surface phonons to be dependent on crystal dimensions and chemical environment.
- OSTI ID:
- 126855
- Report Number(s):
- CONF-950402--
- Country of Publication:
- United States
- Language:
- English
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