Poly(vinylsilane): A new silicon carbide precursor
Conference
·
OSTI ID:126635
- Massachusetts Institute of Technology, Cambridge, MA (United States)
{sup 60}Co {gamma}-radiation-induced polymerization of CH{sub 2}=CHSiCl{sub 3} and CH{sub 2}=CHSi(OEt){sub 3} gave relatively low molecular weight polymers which were reduced with LiAlH{sub 4}. The compositions of the two vinyl polymers differed due to different types and amounts of chain transfer which occurred in each polymerization. As a result, neither {open_quotes}poly(vinylsilane){close_quotes} was the simple [CH{sub 2}CH(SiH{sub 3})]{sub n}. Pyrolysis of these {open_quotes}poly(vinylsilanes){close_quotes} in argon gave only low ceramic residue yields. However, treatment with catalytic amounts of [Cp{sub 2}ZrH{sub 2}]{sub n} or Cp{sub 2}TiCl{sub 2} in refluxing hexane and toluene, respectively, served to crosslink the polymers so that high ceramic residue yields were obtained on pyrolysis.
- OSTI ID:
- 126635
- Report Number(s):
- CONF-950402--
- Country of Publication:
- United States
- Language:
- English
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