Poly(vinylsilane): A new silicon carbide precursor

Conference · Thu Nov 30 23:00:00 EST 1995

OSTI ID:126635

Seyferth, D; Tasi, M; Woo, H G; Son, D Y ^[1]

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1. Massachusetts Institute of Technology, Cambridge, MA (United States)

{sup 60}Co {gamma}-radiation-induced polymerization of CH{sub 2}=CHSiCl{sub 3} and CH{sub 2}=CHSi(OEt){sub 3} gave relatively low molecular weight polymers which were reduced with LiAlH{sub 4}. The compositions of the two vinyl polymers differed due to different types and amounts of chain transfer which occurred in each polymerization. As a result, neither {open_quotes}poly(vinylsilane){close_quotes} was the simple [CH{sub 2}CH(SiH{sub 3})]{sub n}. Pyrolysis of these {open_quotes}poly(vinylsilanes){close_quotes} in argon gave only low ceramic residue yields. However, treatment with catalytic amounts of [Cp{sub 2}ZrH{sub 2}]{sub n} or Cp{sub 2}TiCl{sub 2} in refluxing hexane and toluene, respectively, served to crosslink the polymers so that high ceramic residue yields were obtained on pyrolysis.

• OSTI ID: 126635
• Report Number(s): CONF-950402--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON
CATALYSIS
CROSS-LINKING
GAMMA RADIATION
MOLECULAR WEIGHT
POLYMERIZATION
POLYMERS
PRECURSOR
PYROLYSIS
SILANES
SILICON
SILICON CARBIDES
TITANIUM CHLORIDES
YIELDS