SiC Via Formation for Wide Bandgap HEMT/MMIC Devices.
Conference
·
OSTI ID:1266060
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1266060
- Report Number(s):
- SAND2006-6356C; 525026
- Country of Publication:
- United States
- Language:
- English
Similar Records
SiC Via Fabrication for Wide Bandgap HEMT/MMIC Devices.
Advanced Gate Dielectrics for Wide-Bandgap Devices: Structural and Electrical Properties of Epitaxial MgO on 4H-SiC.
Gate Oxide Capacitance Characterization for Wide-bandgap Devices.
Journal Article
·
Mon Oct 01 00:00:00 EDT 2007
· Journal of Vacuum and Science and Technology
·
OSTI ID:1146951
Advanced Gate Dielectrics for Wide-Bandgap Devices: Structural and Electrical Properties of Epitaxial MgO on 4H-SiC.
Conference
·
Sun Sep 01 00:00:00 EDT 2019
·
OSTI ID:1668913
Gate Oxide Capacitance Characterization for Wide-bandgap Devices.
Conference
·
Thu Sep 01 00:00:00 EDT 2016
·
OSTI ID:1393777