Conducting interfaces between amorphous layers and SrTiO3(110) and SrTiO3(111)
Journal Article
·
· Solid State Ionics
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. Complutense de Madrid, Madrid (Spain)
- Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Bellaterra (Spain); Univ. Autonoma de Barcelona, Bellaterra (Spain)
- Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Bellaterra (Spain)
Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO does not depend on the substrate orientation, i.e. tc (a-LAO/(110)STO) ≈ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientation-dependent enthalpy vacancy formation and diffusion. Furthermore, scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1265973
- Journal Information:
- Solid State Ionics, Journal Name: Solid State Ionics Vol. 281; ISSN 0167-2738
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
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