Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4–xTex (0.1 ≤ x ≤ 0.4)
- Univ. of South Florida, Tampa, FL (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Clemson Univ., Clemson, SC (United States)
Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4–xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. Furthermore, the thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1265651
- Journal Information:
- Dalton Transactions, Vol. 44, Issue 19; ISSN 1477-9226
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
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