Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven; Weber, William J.

doi:10.1016/j.jnucmat.2015.06.036

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Journal Article · Thu Jun 18 00:00:00 EDT 2015 · Journal of Nuclear Materials

DOI:https://doi.org/10.1016/j.jnucmat.2015.06.036· OSTI ID:1265572

Imada, Kenta ^[1]; Ishimaru, Manabu ^[1]; Sato, Kazuhisa ^[2]; Xue, Haizhou ^[3]; Zhang, Yanwen ^[4]; Shannon, Steven ^[5]; Weber, William J. ^[6]

Kyushu Inst. of Technology, Fukuoka (Japan). Dept. of Materials Science and Engineering
Tohoku Univ., Sendai (Japan). Inst. for Materials Research
Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.
North Carolina State Univ., Raleigh, NC (United States). Dept. of Nuclear Engineering
Univ. of Tennessee, Knoxville, TN (United States). Materials Science and Engineering Dept.; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

In this paper, nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. Finally, the resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: Ministry of Education, Sports, Science, and Technology (Japan); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265572

Alternate ID(s):: OSTI ID: 22589922
OSTI ID: 1251994

Journal Information:: Journal of Nuclear Materials, Journal Name: Journal of Nuclear Materials Vol. 465; ISSN 0022-3115

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (27)

The radiation damage tolerance of ultra-high strength nanolayered composites Misra, A.; Demkowicz, M. J.; Zhang, X. JOM, Vol. 59, Issue 9 https://doi.org/10.1007/s11837-007-0120-6	journal	September 2007
Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties Poate, J. M.; Coffa, S.; Jacobson, D. C. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 55, Issue 1-4 https://doi.org/10.1016/0168-583X(91)96226-B	journal	April 1991
Accumulation and recovery of defects in ion-irradiated nanocrystalline gold Chimi, Y.; Iwase, A.; Ishikawa, N. Journal of Nuclear Materials, Vol. 297, Issue 3 https://doi.org/10.1016/S0022-3115(01)00629-8	journal	September 2001
Instability of irradiation induced defects in nanostructured materials Rose, M.; Balogh, A. G.; Hahn, H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 127-128 https://doi.org/10.1016/S0168-583X(96)00863-4	journal	May 1997
Structure and properties of ion-beam-modified (6H) silicon carbide Weber, W. J.; Wang, L. M.; Yu, N. Materials Science and Engineering: A, Vol. 253, Issue 1-2 https://doi.org/10.1016/S0921-5093(98)00710-2	journal	September 1998
Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene Wang, Bin; Puzyrev, Yevgeniy; Pantelides, Sokrates T. Carbon, Vol. 49, Issue 12 https://doi.org/10.1016/j.carbon.2011.05.038	journal	October 2011
Radiation effects in SiC for nuclear structural applications Katoh, Yutai; Snead, Lance L.; Szlufarska, Izabela Current Opinion in Solid State and Materials Science, Vol. 16, Issue 3 https://doi.org/10.1016/j.cossms.2012.03.005	journal	June 2012
Impact of irradiation on the microstructure of nanocrystalline materials Nita, N.; Schaeublin, R.; Victoria, M. Journal of Nuclear Materials, Vol. 329-333 https://doi.org/10.1016/j.jnucmat.2004.04.058	journal	August 2004
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation Jamison, Laura; Zheng, Ming-Jie; Shannon, Steve Journal of Nuclear Materials, Vol. 445, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2013.11.010	journal	February 2014
Ion-beam induced defects and nanoscale amorphous clusters in silicon carbide Weber, W. J.; Gao, F.; Devanathan, R. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 216 https://doi.org/10.1016/j.nimb.2003.11.016	journal	February 2004
Effects of dynamic recovery on amorphization kinetics in 6H-SiC Weber, William J.; Wang, Lumin; Zhang, Yanwen Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 266, Issue 12-13 https://doi.org/10.1016/j.nimb.2008.03.119	journal	June 2008
Review of dynamic recovery effects on ion irradiation damage in ionic-covalent materials Weber, William J.; Zhang, Yanwen; Wang, Lumin Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 277 https://doi.org/10.1016/j.nimb.2011.12.043	journal	April 2012
New ion beam materials laboratory for materials modification and irradiation effects research Zhang, Y.; Crespillo, M. L.; Xue, H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 338 https://doi.org/10.1016/j.nimb.2014.07.028	journal	November 2014
Are Nanoporous Materials Radiation Resistant? Bringa, E. M.; Monk, J. D.; Caro, A. Nano Letters, Vol. 12, Issue 7 https://doi.org/10.1021/nl201383u	journal	June 2011
Radiation-induced amorphization resistance and radiation tolerance in structurally related oxides Sickafus, Kurt E.; Grimes, Robin W.; Valdez, James A. Nature Materials, Vol. 6, Issue 3 https://doi.org/10.1038/nmat1842	journal	February 2007
Greater tolerance for nuclear materials Grimes, Robin W.; Konings, Rudy J. M.; Edwards, Lyndon Nature Materials, Vol. 7, Issue 9 https://doi.org/10.1038/nmat2266	journal	September 2008
Nanoscale engineering of radiation tolerant silicon carbide Zhang, Yanwen; Ishimaru, Manabu; Varga, Tamas Physical Chemistry Chemical Physics, Vol. 14, Issue 38 https://doi.org/10.1039/c2cp42342a	journal	January 2012
Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis Zhang, Y.; Weber, W. J.; Jiang, W. Journal of Applied Physics, Vol. 91, Issue 10 https://doi.org/10.1063/1.1469204	journal	January 2002
Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC Zhang, Y.; Weber, W. J.; Jiang, W. Journal of Applied Physics, Vol. 95, Issue 8 https://doi.org/10.1063/1.1666974	journal	April 2004
Nuclear waste disposal—pyrochlore (A2B2O7): Nuclear waste form for the immobilization of plutonium and “minor” actinides Ewing, Rodney C.; Weber, William J.; Lian, Jie Journal of Applied Physics, Vol. 95, Issue 11 https://doi.org/10.1063/1.1707213	journal	June 2004
Enhanced radiation tolerance in nanocrystalline MgGa2O4 Shen, Tong D.; Feng, Shihai; Tang, Ming Applied Physics Letters, Vol. 90, Issue 26 https://doi.org/10.1063/1.2753098	journal	June 2007
Origin of radiation tolerance in 3C-SiC with nanolayered planar defects Ishimaru, Manabu; Zhang, Yanwen; Shannon, Steven Applied Physics Letters, Vol. 103, Issue 3 https://doi.org/10.1063/1.4813593	journal	July 2013
Atomic configuration of irradiation-induced planar defects in 3C-SiC Lin, Y. R.; Ho, C. Y.; Hsieh, C. Y. Applied Physics Letters, Vol. 104, Issue 12 https://doi.org/10.1063/1.4869829	journal	March 2014
Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission Bai, X. M.; Voter, A. F.; Hoagland, R. G. Science, Vol. 327, Issue 5973 https://doi.org/10.1126/science.1183723	journal	March 2010
Radiation Tolerance of Complex Oxides Sickafus, K. E. Science, Vol. 289, Issue 5480 https://doi.org/10.1126/science.289.5480.748	journal	August 2000
Radiation effects in crystalline ceramics for the immobilization of high-level nuclear waste and plutonium Weber, W. J.; Ewing, R. C.; Catlow, C. R. A. Journal of Materials Research, Vol. 13, Issue 6 https://doi.org/10.1557/JMR.1998.0205	journal	June 1998
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide Jamison, Laura; Sridharan, Kumar; Shannon, Steve Journal of Materials Research, Vol. 29, Issue 23 https://doi.org/10.1557/jmr.2014.340	journal	December 2014

Cited By (1)

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C ⁺ and He ⁺ ions Zhang, Limin; Jiang, Weilin; Pan, Chenglong Journal of Raman Spectroscopy, Vol. 50, Issue 8 https://doi.org/10.1002/jrs.5631	journal	May 2019

Similar Records

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Journal Article · Thu Apr 15 00:00:00 EDT 2021 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms · OSTI ID:1770124

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

Journal Article · Sat Jun 18 20:00:00 EDT 2016 · Journal of Nuclear Materials · OSTI ID:1261569

Atomic configuration of irradiation-induced planar defects in 3C-SiC

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:22258596

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Citation Formats

References (27)

Cited By (1)

Similar Records

Related Subjects