Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

Feng, Wei; Wu, Jing-Bin; Li, Xiaoli; Zheng, Wei; Zhou, Xin; Xiao, Kai; Cao, Wenwu; Yang, Bin; Idrobo, Juan-Carlos; Basile, Leonardo; Tian, Weiquan; Tan, PingHeng; Hu, PingAn

doi:10.1039/C5TC01208B

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

Journal Article · Wed May 20 00:00:00 EDT 2015 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/C5TC01208B· OSTI ID:1265546

Feng, Wei ^[1]; Wu, Jing-Bin ^[2]; Li, Xiaoli ^[2]; Zheng, Wei ^[3]; Zhou, Xin ^[4]; Xiao, Kai ^[5]; Cao, Wenwu ^[6]; Yang, Bin ^[6]; Idrobo, Juan-Carlos ^[5]; Basile, Leonardo ^[5]; Tian, Weiquan ^[4]; Tan, PingHeng ^[2]; Hu, PingAn ^[3]

Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education; Harbin Inst. of Technology (China). School of Materials Science and Engineering
Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Super Lattices and Microstructures. Inst. of Semiconductors
Harbin Inst. of Technology (China). Key Lab. of Microsystem and Microstructure of Ministry of Education
Harbin Inst. of Technology (China). State Key Lab. of Urban Water Resource and Environment
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Harbin Inst. of Technology (China). Condensed Matter Science and Technology Inst.

In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~10⁴ A W^-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~10¹² to 10¹³ Jones, which surpasses that of the currently exploited InGaAs photodetectors (10¹¹ to 10¹² Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Harbin Inst. of Technology (China); Chinese Academy of Sciences (CAS), Beijing (China)

Sponsoring Organization:: USDOE Office of Science (SC); National Natural Science Foundation of China (NSFC); National Key Basic Research Program of China

OSTI ID:: 1265546

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 27 Vol. 3; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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