Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions

Eliseev, Eugene A.; Kalinin, Sergei V.; Morozovska, Anna N.

doi:10.1063/1.4906139

Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions

Journal Article · Wed Jan 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906139· OSTI ID:1265460

Eliseev, Eugene A. ^[1]; ^[2]; Morozovska, Anna N. ^[3]

NAS of Ukraine, Kyiv (Ukraine). Inst. of Problems for Material Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
NAS of Ukraine, Kyiv (Ukraine). Inst. of Physics

General features of finite size effects in the ferroelectric-semiconductor film under open-circuit electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different from the characteristics of short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. Performed analysis is relevant for the quantitative description of free-standing ferroelectric films phase diagrams and polar properties. Also our results can be useful for the explanation of the scanning-probe microscopy experiments on free ferroelectric surfaces.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265460

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 117; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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