Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
- National Academy of Science of Ukraine, Kiev, Ukraine
- Institute of Physics and Applied Mathematics, Ural State University
- ORNL
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the electric field of the nanosized tip of the Scanning Probe Microscope) the thickness and charge of the interface layer drastically changes, in particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1030989
- Journal Information:
- Physical Review B, Vol. 81, Issue 20; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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