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The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

Journal Article · · Proceedings of SPIE - The International Society for Optical Engineering
DOI:https://doi.org/10.1117/12.2196654· OSTI ID:1264157
 [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3]
  1. Univ. of Rochester, Rochester, NY (United States); Laser Zentrum Hannover e.V. (Germany); Laboratory for Laser Energetics, U. of Rochester
  2. Univ. of Rochester, Rochester, NY (United States)
  3. Univ. of Rochester, Rochester, NY (United States); Laser Zentrum Hannover e.V. (Germany)
The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.
Research Organization:
Univ. of Rochester, Rochester, NY (United States). Lab. for Laser Energetics
Sponsoring Organization:
USDOE
Grant/Contract Number:
NA0001944
OSTI ID:
1264157
Journal Information:
Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 9632; ISSN 0277-786X
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

References (7)

Near-ultraviolet absorption and nanosecond-pulse-laser damage in HfO 2 monolayers studied by submicrometer-resolution photothermal heterodyne imaging and atomic force microscopy journal June 2011
First principles study of the structural, electronic, and dielectric properties of amorphous HfO 2 journal September 2011
Vacancy and interstitial defects in hafnia journal May 2002
Laser calorimetric absorptance testing of samples with varying geometry conference November 2013
Optical coating design with reduced electric field intensity journal January 1977
Measuring the absolute absorptance of optical laser components journal January 1998
Nanosecond laser-induced damage of nodular defects in dielectric multilayer mirrors [Invited] journal November 2013

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