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Self-heating and failure in scalable graphene devices

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep26457· OSTI ID:1262367
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1262367
Alternate ID(s):
OSTI ID: 1338306
Report Number(s):
SAND--2015-10741J; SAND--2016-3093J; srep26457
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (4)

Electrical Transport and Power Dissipation in Aerosol-Jet-Printed Graphene Interconnects journal July 2018
Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography journal February 2019
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors journal January 2020
Nonequilibrium excitations and transport of Dirac electrons in electric-field-driven graphene journal May 2018

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