Self-heating and failure in scalable graphene devices
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1262367
- Alternate ID(s):
- OSTI ID: 1338306
- Report Number(s):
- SAND--2015-10741J; SAND--2016-3093J; srep26457
- Journal Information:
- Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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